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| Dec 2002 AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its commondrain configuration. Features VDS (V) = 20V ID = 6 A RDS(ON) < 25m (VGS = 4.5V) RDS(ON) < 30m (VGS = 2.5V) RDS(ON) < 40m (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 8 6.4 5.4 30 1.5 1.08 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 64 89 53 Max 83 120 70 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO8806 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=6A TJ=125C VGS=2.5V, ID=5A VGS=1.8V, ID=4A VDS=5V, ID=5A 0.4 30 19.3 27.6 24 15 30.5 23 0.76 25 35 30 40 1 2.5 0.6 Min 20 1 5 100 1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC Static Drain-Source On-Resistance gFS VSD IS Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance VGS=0V, VDS=10V, f=1MHz 940 157 133 15 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=4.5V, VDS=10V, ID=6A 1 4 6.5 9 56.5 13.2 22.4 8.4 VGS=5V, VDS=10V, RL=1.8, RGEN=6 IF=6A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO8806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 50 Normalized On-Resistance 1.60 VGS=2.5V ID=6A 1.40 VGS=4.5V VGS=1.8V 1.20 4 0 0 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 20 8V 4.5V 2V 16 12 VGS=1.5V ID(A) 8 VDS=5V 125C 3V 2.5V 25C 40 RDS(ON) (m) VGS=1.8V 30 VGS=2.5V 20 VGS=4.5V 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 55 50 45 RDS(ON) (m) 40 35 30 25 20 15 10 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=6A 1.00 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 IS (A) 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C Alpha & Omega Semiconductor, Ltd. AO8806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 2 4 6 8 10 12 14 16 18 Qg (nC) Figure 7: Gate-Charge Characteristics 2000 VDS=10V ID=6A 1750 1500 1250 1000 750 500 250 0 0 5 10 15 20 Ciss Coss Crss 100.0 TJ(Max)=150C TA=25C RDS(ON) limited 100s 1ms 0.1s 10ms 10s Power (W) 40 TJ(Max)=150C TA=25C ID (Amps) 10.0 30 20 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=83C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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